Semiconductor device with fin end spacer plug and method of manufacturing the same

ABSTRACT

A semiconductor device includes a plurality of fins on a substrate, a fin end spacer plug on an end surface of each of the plurality of fins and a fin liner layer, an insulating layer on the plurality of fins, and a source/drain epitaxial layer in a source/drain recess in each of the plurality of fins.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.17/591,906 filed on Feb. 3, 2022, which is a divisional of U.S. patentapplication Ser. No. 16/535,975 filed on Aug. 8, 2019, now U.S. Pat. No.11,244,867, which claims priority to U.S. Provisional Patent ApplicationNo. 62/738,347 filed on Sep. 28, 2018, the entire contents of each ofwhich are incorporated herein by reference.

TECHNICAL FIELD

The disclosure relates to methods of manufacturing fin field effecttransistors (FinFETs) and/or gate-all-around (GAA) field effecttransistors (FETs) for semiconductor integrated circuits, and moreparticularly to methods of manufacturing fin end spacer plugs to protecta source/drain epitaxial layer, and semiconductor devices.

BACKGROUND

Traditional planar thin film devices provide superior performance withlow power consumption. To enhance the device controllability and reducethe substrate surface area occupied by the planar devices, thesemiconductor industry has progressed into nanometer technology processnodes in pursuit of higher device density, higher performance, and lowercosts. Challenges from both fabrication and design issues have resultedin the development of three-dimensional designs, such as a multi-gatefield effect transistor (FET), including a fin field effect transistor(FinFET) and a gate-all-around (GAA) field effect transistor (FET). In aFinFET, a gate electrode is adjacent to three side surfaces of a channelregion with a gate dielectric layer interposed therebetween. Because thegate structure surrounds (wraps) the fin on three surfaces (i.e., thetop surface and the opposite lateral surfaces), the transistoressentially has three gates controlling (one gate at each of the topsurface and the opposite lateral surfaces) the current through the finor channel region. The fourth side of the bottom of the channel is faraway from the gate electrode and thus is not under close gate control.In contrast, in a GAA FET, all side surfaces (i.e. the top surface, theopposite lateral surfaces, and the bottom surface) of the channel regionare surrounded by the gate electrode, which allows for fuller depletionin the channel region and results in reduced short-channel effect due tosteeper sub-threshold current swing (SS) and smaller drain inducedbarrier lowering (DIBL). As transistor dimensions are continually scaleddown to sub 10-15 nm technology nodes, further improvements of theFinFETs and/or GAA FETs are required.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 shows a schematic view of a processing operation of a substrate,according to an embodiment of the present disclosure.

FIG. 2 shows a schematic view of stacked semiconductor layers formedover the processed substrate of FIG. 1 , according to an embodiment ofthe present disclosure.

FIG. 3A shows a schematic view of fin structures made from the substrateand the stacked layers formed on the substrate of FIG. 2 , according toan embodiment of the present disclosure.

FIG. 3B shows a schematic view of fin structures, according to anotherembodiment of the present disclosure.

FIG. 4A shows a schematic view of the processed substrate of FIG. 3A,according to an embodiment of the present disclosure.

FIG. 4B shows a schematic view of the processed substrate of FIG. 3B,according to another embodiment of the present disclosure.

FIG. 5A shows a schematic view of the processed substrate of FIG. 4A,according to an embodiment of the present disclosure.

FIG. 5B shows a schematic view of the processed substrate of FIG. 4B,according to another embodiment of the present disclosure.

FIG. 6A shows a schematic view of the processed substrate of FIG. 5A,according to an embodiment of the present disclosure.

FIG. 6B shows a schematic view of the processed substrate of FIG. 5B,according to another embodiment of the present disclosure.

FIG. 7 shows a schematic view of an embodiment after processing thesubstrate of FIG. 6B.

FIG. 8 shows a top plan view of the embodiment of FIG. 7 .

FIGS. 9A, 9B, 10A, 10B, 10C, 11A, 11B, 11C, 12A, 12B, 12C, 13A, 13B,13C, 14A, 14B, 14C, 15A, 15B, 16A, 16B, 17A, 17B, 18A, 18B, 19A, 19B,19C, 20A, 20B, 21A, 21B, 22A, and 22B show operations of manufacturing asemiconductor FinFET device according to an embodiment of the presentdisclosure. Each of FIGS. 9A, 10A, 11A, 12A, 13A, 14A, 15A, 16A, 17A,18A, 19A, 20A, 21A, and 22A includes a top plan view and each of FIGS.9B, 9C, 10B, 10C, 11B, 11C, 12B, 12C, 13B, 13C, 14B, 14C, 15B, 16B, 17B,18B, 19B, 20B, 21B, and 22B includes a cross-sectional view of thesemiconductor FinFET device along a cut line A-A in a plane including xand z axes of FIG. 7 .

FIG. 23 shows a schematic view of another embodiment after processingthe substrate of FIG. 6B.

FIG. 24 shows a top plan view of the embodiment of FIG. 23 .

FIGS. 25A, 25B, 26A, 26B, 27A, 27B, 28A, 28B, 29A, 29B, 30A, 30B, 31A,31B, 32A, 32B, 33A, 33B, 34A, 34B, 35A, 35B, 36A, 36B, 37A, 37B, 38A,and 38B show operations of manufacturing a semiconductor FinFET deviceaccording to an embodiment of the present disclosure. Each of FIGS. 25A,26A, 27A, 28A, 29A, 30A, 31A, 32A, 33A, 34A, 35A, 36A, 37A, and 38Aincludes a top plan view and each of FIGS. 25B, 26B, 26C, 27B, 27C, 28B,28C, 29B, 29C, 30B, 30C, 31B, 32B, 33B, 34B, 35B, 36B, 37B, and 38Bincludes a cross-sectional view of the semiconductor FinFET device alonga cut line A-A in a plane including x and z axes of FIG. 23 .

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the invention. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“being made of” may mean either “comprising” or “consisting of.” In thepresent disclosure, a phrase “one of A, B and C” means “A, B and/or C”(A, B, C, A and B, A and C, B and C, or A, B and C), and does not meanone element from A, one element from B and one element from C, unlessotherwise described.

In this disclosure, a source/drain refers to a source and/or a drain. Itis noted that in the present disclosure, a source and a drain areinterchangeably used and the structures thereof are substantially thesame.

During the manufacturing process of a semiconductor FET device havingsource/drain epitaxial layers, overlay shift may occur and causemisalignment of structures, e.g. dummy polycrystalline siliconstructures formed on an edge of a fin end region for protection of theedge of the fin end region. The dummy polycrystalline silicon structureis called a ‘dummy structure’ because it will be subsequently removedand is not part of the circuitry. Overlay shift, however, may shift theposition of the dummy polycrystalline silicon structure formed at theedge of a fin end region to a region away from the fin end, forming anarrow gap adjacent to the fine end. This narrow gap does not allow acomplete formation of a protective layer, e.g. sidewall layer, andprevents the protective layer from carrying out its designed function(e.g. shielding the source/drain epitaxial layer from etchant). This maylead to defects such as a damaged source/drain epitaxial layer byetching with a loss of material of the source/drain epitaxial layerand/or a chemical alteration of the source/drain epitaxial layer. Suchdefects could cause the entire wafer to be defective and, therefore,discarded. When the gap is sufficiently wide due to overlay shift, theprotective layer can still be formed completely and the overlay shiftdoes not cause the defect formation.

Much effort has been applied to model overlay so as to solve the overlayshift problem. For example, the linear overlay model is designed forsuch purpose. Without negligible field to field and wafer to waferoverlay variations, the total overlay shift in a specific in-planedirection along a major surface of the wafer is equal to the sum of thetranslation overlay parameter, magnification overlay parameter, rotationoverlay parameter, and a residual overlay parameter. Along with thedownscaling of device dimension to nanoscale, the control of overlayshift is critical to the critical dimension (CD) variability.Embodiments of the present disclosure are described therein.

As shown in FIG. 1 , impurity ions (dopants) 12 are implanted into asemiconductor substrate 10 to form a well region. The ion implantationis performed to prevent a punch-through effect. In one embodiment,substrate 10 includes a single crystalline semiconductor layer on atleast it surface portion. The substrate 10 may comprise a singlecrystalline semiconductor material such as, but not limited to Si, Ge,SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs, GaSbP, GaAsSb and InP. Inthis embodiment, the substrate 10 is made of Si. The substrate 10 mayinclude in its surface region, one or more buffer layers (not shown).The buffer layers can serve to gradually change the lattice constantfrom that of the substrate to that of the source/drain regions. Thebuffer layers may be formed from epitaxially grown single crystallinesemiconductor materials such as, but not limited to Si, Ge, GeSn, SiGe,GaAs, InSb, GaP, GaSb, InAlAs, InGaAs, GaSbP, GaAsSb, GaN, GaP, and InP.In a particular embodiment, the substrate 10 comprises silicon germanium(SiGe) buffer layers epitaxially grown on the silicon substrate 10. Thegermanium concentration of the SiGe buffer layers may increase from 30atomic % germanium for the bottom-most buffer layer to 70 atomic %germanium for the top-most buffer layer. In some embodiments of thepresent disclosure, the substrate 10 includes various regions that havebeen suitably doped with impurities (e.g., p-type or n-typeconductivity). The dopants 12 are, for example, boron (BF₂) for ann-type FinFET and phosphorus for a p-type FinFET.

In FIG. 2 , stacked semiconductor layers are formed over the substrate10, in a case where a gate all-around (GAA) field effect transistor(FET) is fabricated. The stacked semiconductor layers include firstsemiconductor layers 20 and second semiconductor layers 21. The firstsemiconductor layers 20 and the second semiconductor layers 21 areformed of materials having different lattice constants, and include oneor more layers of Si, Ge, SiGe, GaAs, InSb, GaP, GaSb, InAlAs, InGaAs,GaSbP, GaAsSb or InP, according to some embodiments of the presentdisclosure.

In some embodiments, the first semiconductor layers 20 and the secondsemiconductor layers 21 are formed of Si, a Si compound, SiGe, Ge or aGe compound. In one embodiment, the first semiconductor layers 20 areSi_(1-x)Ge_(x), where x is more than about 0.3, or Ge (x=1.0) and thesecond semiconductor layers 21 are Si or Si_(1-y)Ge_(y), where y is lessthan about 0.4 and x>y. In this disclosure, an “M” compound” or an “Mbased compound” means the majority of the compound is M.

In another embodiment, the second semiconductor layers 21 areSi_(1-y)Ge_(y), where y is more than about 0.3, or Ge, and the firstsemiconductor layers 20 are Si or Si_(1-x)Ge_(x), where x is less thanabout 0.4 and x<y. In yet other embodiments, the first semiconductorlayer 20 is made of Si_(1-x)Ge_(x), where x is in a range from about 0.3to about 0.8, and the second semiconductor layer 25 is made ofSi_(1-x)Ge_(x), where x is in a range from about 0.1 to about 0.4.

Also, in FIG. 2 , five layers of the first semiconductor layer 20 andsix layers of the second semiconductor layer 21 are disposed. However,the number of the layers are not limited to five, and may be as small as1 (each layer) and in some embodiments, 2-10 layers of each of the firstand second semiconductor layers are formed. By adjusting the numbers ofthe stacked layers, a driving current of the GAA FET device can beadjusted.

The first semiconductor layers 20 and the second semiconductor layers 21are epitaxially formed over the substrate 10. The thickness of the firstsemiconductor layers 20 may be equal to or greater than that of thesecond semiconductor layers 25, and is in a range from about 5 nm toabout 50 nm in some embodiments, and is in a range from about 10 nm toabout 30 nm in other embodiments. The thickness of the secondsemiconductor layers 21 is in a range from about 5 nm to about 30 nm insome embodiments, and is in a range from about 10 nm to about 20 nm inother embodiments. The thickness of each of the first semiconductorlayers 20 may be the same, or may vary. In some embodiments, the bottomfirst semiconductor layer 20 (the closest layer 20 to the substrate 10)is thicker than the remaining first semiconductor layers 20. Thethickness of the bottom first semiconductor layer 20 is in a range fromabout 10 nm to about 50 nm in some embodiments, or is in a range fromabout 20 nm to about 40 nm in other embodiments.

Further, in FIG. 2 , a mask layer 30 is formed over the stacked layers20 and 21. In some embodiments, the mask layer 30 includes a first masklayer 31 and a second mask layer 32. The first mask layer 31 is a padoxide layer made of a silicon oxide, which can be formed by a thermaloxidation. The second mask layer 32 is made of a silicon nitride, whichis formed by chemical vapor deposition (CVD), including low pressure CVD(LPCVD) and plasma enhanced CVD (PECVD), physical vapor deposition(PVD), atomic layer deposition (ALD), or other suitable process. Themask layer 30 is patterned into a mask pattern by using patterningoperations including photo-lithography and etching. In some embodiments,the first mask layer 31 is made of silicon nitride and the second masklayer 32 is made of silicon oxide.

When the semiconductor device is a FinFET, no stacked layers are formed(see FIGS. 3B and 4B). In some embodiments, one or more epitaxial layersfor a channel region are formed over the substrate 10. For GAA FETdevices, operations shown in FIGS. 3A and 4A are applied. In FIG. 3A,the stacked layers of the first and second semiconductor layers 20, 21are patterned by using the patterned mask layer 30, thereby the stackedlayers 20 and 21 are formed into fin structures 40 extending in alengthwise direction along the x direction. In some embodiments of thepresent disclosure, the fin structures 40 are formed by patterning usingone or more photolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. In some embodiments of the present disclosure, thephotolithographic method includes ultraviolet (UV) photolithography,deep ultraviolet (DUV) photolithography, and extreme ultraviolet (EUV)photolithography.

In FIG. 3A, two fin structures 40 are arranged in the y direction butthe number of the fin structures 40 is not limited to, and may be assmall as one and three or more in some embodiments of the presentdisclosure. In some embodiments, one or more dummy fin structures areformed on both sides of the fin structures 40 to improve patternfidelity in the patterning operations. As shown in FIG. 3A, the finstructures 40 have upper portions constituted by the stackedsemiconductor layers 20, 21 and well portions 11. The width W1 of theupper portion of the fin structure 40 along the y direction is in arange from about 10 nm to about 40 nm in some embodiments, and is in arange from about 20 nm to about 30 nm in other embodiments. The heightH1 along the z direction of the fin structure 40 is in a range fromabout 100 nm to about 200 nm.

FIG. 3B shows the case for a FinFET device. For a FinFET device, thesubstrate 10 (and/or an epitaxial layer formed over the substrate) isetched to form one or more fin structures. In FIG. 3B, the mask layer 30including first mask layer 31 and second mask layer 32 formed on thesubstrate 10 is patterned by using the patterned mask layer 30, therebythe substrate 10 is formed into fin structures 40 extending in thelengthwise direction along the x direction. In FIG. 3B, two finstructures 40 are arranged in the y direction but the number of the finstructures 40 is not limited to two, and may be as small as one andthree or more in some embodiments of the present disclosure, dependingon the desired device performance and device architecture. In someembodiments, one or more dummy fin structures (not shown) are formed onboth sides of the fin structures 40, i.e. between the two fin structures40, to improve pattern fidelity in the patterning operations such asphotolithographic patterning of the mask layer 30. As shown in FIG. 3B,the substrate 10 has well portions 11.

After the fin structures 40 are formed in FIG. 3A or FIG. 3B, aninsulating material layer 60 including one or more layers of insulatingmaterial is formed over the substrate 10 in FIG. 4A or FIG. 4B so thatthe fin structures 40 are fully embedded in the insulating materiallayer 60. The insulating material for the insulating material layer 60includes silicon oxide, silicon nitride, silicon oxynitride, siliconcarbon nitride, silicon carbon oxynitride, fluorine-doped silicate glass(FSG), or a low-k dielectric material, formed by LPCVD (low pressurechemical vapor deposition), plasma-CVD or flowable CVD. An annealoperation is performed after the formation of the insulating layer 60 insome embodiments of the present disclosure. Then, a planarizationoperation, such as a chemical mechanical polishing (CMP) method and/oran etch-back method, is performed such that the upper surface of theuppermost second semiconductor layer 21 or fin structure 40 is exposedfrom the insulating material layer 60 as shown in FIGS. 4A and 4B. Insome embodiments, the first and second mask layers 31 and 32 are removedby the CMP as shown in FIGS. 4A and 4B, and in other embodiments, theCMP operation stops on the second mask layer 32. In some embodiments, afirst liner layer or fin liner 50 is formed over the structure of FIGS.3A and 3B before forming the insulating material layer 60, as shown FIG.4A or FIG. 4B. The fin liner or first liner layer 50 is formed ofsilicon nitride or a silicon nitride-based material (e.g., siliconoxynitride Si—O—N, silicon carbon nitride Si—C—N, or silicon carbonoxynitride Si—C—O—N).

Then, as shown in FIG. 5A or FIG. 5B, the insulating material layer 60is recessed to form an isolation insulating layer 60 so that the upperportions of the fin structures 40 are exposed. With this operation, thesubstrate 10 and the well portions 11 of the fin structures 40 areelectrically separated from each other by the isolation insulating layer60, which is also called a shallow trench isolation (STI) layer. In theembodiment shown in FIG. 5A, the insulating material layer 60 isrecessed until the bottommost first semiconductor layer 20 is exposed.In other embodiments of the present disclosure, the upper portion of thewell layer 11 is also partially exposed. The first semiconductor layers20 are sacrificial layers which are subsequently partially removed, andthe second semiconductor layers 21 are subsequently formed into channellayers of a GAA FET device.

After the isolation insulating layer 60 is formed, a sacrificial gatedielectric layer 70 is formed, as shown in FIG. 6A or FIG. 6B. Thesacrificial gate dielectric layer 70 includes one or more layers ofinsulating material, such as a silicon oxide-based material includingSiO₂. In one embodiment, silicon oxide formed by chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD), physical vapor deposition (PVD), atomic layer deposition(ALD), or other suitable process is used. The thickness of thesacrificial gate dielectric layer 70 is in a range from about 1 nm toabout 5 nm in some embodiments of the present disclosure. Thesacrificial gate dielectric layer 70 is formed over the fin structure40.

Hereinafter, a manufacturing operation for a FinFET is explained. FIG. 7shows a schematic view of the substrate of FIG. 6B with polycrystallinesilicon dummy structures 90 and 100′, according to an embodiment of thepresent disclosure and FIG. 8 shows a top plan view of the processedsubstrate of FIG. 7 . In FIG. 7 , in some embodiments of the presentdisclosure, the fin structures 40 are formed on the substrate 10 andextend in a lengthwise direction along x-direction. Each of the finstructures 40 has two fin edge regions at opposite ends along thelengthwise direction of the fin structures 40 along the x-direction. Oneor more channel regions are formed between the fin ends. In someembodiments of the present disclosure, the separation between the finstructures 40 depends on the device design, such as density of FinFETdevices in a processor chip and the performance requirement of thesemiconductor device having such a FinFET structure.

Also, in FIG. 7 , the polycrystalline silicon dummy structures 100′ areformed at a position adjacent to the fin ends of the fin structures 40and are not formed over the fin structures 40. FIG. 8 shows a gapbetween the polycrystalline silicon dummy structure 100′ and the finstructure 40. Also, polycrystalline silicon dummy structures 90 areformed over regions of the fin structures 40 between the fin edges orfin ends along the lengthwise direction in the x direction. Thepolycrystalline silicon dummy structures 90 are called ‘dummystructures’ and they will be removed and replaced with the gatestructures of the FinFET devices, and the polycrystalline silicon dummystructures 100 are also ‘dummy structures’ because they will besubsequently removed. FIG. 8 shows a top plan view of the embodiment ofFIG. 7 . In FIG. 8 , the polycrystalline silicon dummy structures 90cover regions between the edges of fin ends of the fin structures 40along a lengthwise direction of the fin structures 40. Thepolycrystalline silicon dummy structures 100′ are not formed over theedges of ends of the fin structures 40. In some embodiments, the dummystructures 90 and 100′ are formed of amorphous silicon or other suitablematerial.

FIGS. 9A, 9B, 10A, 10B, 11A, 11B, 12A, 12B, 13A, 13B, 14A, 14B, 15A,15B, 16A, 16B, 17A, 17B, 18A, 18B, 19A, 19B, 19C, 20A, 20B, 21A, 21B,22A, 22B, 23A, 23B, 24A, 24A, 25A, and 25B show operations ofmanufacturing a semiconductor FinFET device according to an embodimentof the present disclosure. Each of the FIGS. 9A, 10A, 11A, 12A, 13A,14A, 15A, 16A, 17A, 18A, 19A, 20A, 21A, 22A, 23A, 24A, and 25A includesa top plan view and each of the FIGS. 9B, 10B, 11B, 12B, 13B, 14B, 15B,16B, 17B, 18B, 19B, 20B, 21B, 22B, 23B, 24B, and 25B includes across-sectional view of the semiconductor FinFET device along a cut lineA-A in a plane including x and z axes of FIG. 7 . FIG. 19C is a panview. Throughout the various views and illustrative embodiments, likereference numbers are used to designate like elements. It is understoodthat additional operations can be provided before, during, and afterprocesses shown by FIGS. 9A-24B, and some of the operations describedbelow can be replaced or eliminated, for additional embodiments of themethod. The order of the operations/processes may be interchangeable.Material, configuration, dimensions and/or processes the same as orsimilar to the foregoing embodiments described with respect to FIGS.1-6B may be employed in the following embodiments, and detailedexplanation thereof may be omitted.

FIGS. 9A and 9B show an operation for fin-end patterning. In particular,FIG. 9A shows a top plan view of an embodiment of the presentdisclosure. Also, FIG. 9B is a cross-sectional view of the embodiment,showing the layered structure. The fin structure 40 has a bottom region40 i and a top active region 40 a which is processed to form a channelregion (not shown) and a source/drain region (not shown). As set forthabove, after the fin structures are patterned by using the first andsecond mask layers 31 and 32 as shown in FIG. 5A or 5B, the insulatingmaterial layer 60 is formed to cover the patterned fin structures. Then,a CMP operation is performed to remove the upper portion of theinsulating material layer 60 to form a STI layer 60. In this embodiment,the CMP stops on the upper surface of the second mask layer 32. In FIG.9B, a silicon nitride layer 80 a, which corresponds to the first masklayer 31, is formed on the fin active region 40 a and an insulatingoxide layer 80 b, which corresponds to the second mask layer 32, isformed on the silicon nitride layer 80 a.

In FIG. 9B, a fin liner 50 is formed on the bottom region 40 i of thefin structures 40. A mask pattern 80 c is formed on the insulating oxidelayer 80 b by a photolithographic method. The mask pattern 80 c isformed of a light sensitive photoresist material in some embodiments.

FIGS. 10A and 10B show an operation for etching the insulating oxidelayer 80 b and the shallow trench isolation (STI) layer 60. The etchingincludes one or more dry etching and/or wet etching. FIG. 10A shows atop plan view and FIG. 10B shows a cross-sectional view. FIG. 10B showsthat the shallow trench isolation (STI) layer 60 is recessed and the finliner 50 is not etched. In some embodiments of the present disclosure,the STI layer 60 is recessed to have a top surface lower than the topsurface of the fin liner 50. In this way, a deep plug 140′ (FIG. 12B)can be formed. In other embodiments of the present disclosure, the STIlayer 60 is recessed to have a top surface at the same level as orhigher than the top surface of the fin liner 50.

FIGS. 10A and 10C show an operation for etching the insulating oxidelayer 80 b and the shallow trench isolation (STI) layer 60. The etchingincludes one or more dry etching and/or wet etching. FIG. 10A shows atop plan view and FIG. 10C shows a cross-sectional view. FIG. 10C showsthat the shallow trench isolation (STI) layer 60 is recessed and the finliner 50 is not etched. In some embodiments of the present disclosure,the STI layer 60 is recessed to have a top surface higher than the topsurface of the fin liner 50. In other embodiments of the presentdisclosure, the STI layer 60 is recessed to have a top surface at thesame level as the top surface of the fin liner 50.

FIGS. 11A and 11B show an operation for formation of sidewall spacerplug 140 for the fin end. The fin end sidewall spacer plug 140 for finend is formed of an insulating material different from the STI layer 60.In some embodiments, the fin end sidewall spacer plug 140 includes oneor more layers of a silicon nitride based insulating material, such assilicon nitride, silicon oxynitride, silicon carbon nitride, or siliconcarbon oxynitride, by a deposition method, such as chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD); physical vapor deposition (PVD); atomic layer deposition(ALD); or other suitable process. FIG. 11A shows a top plan view of thesidewall spacer plug 140 and FIG. 11B shows a cross-sectional view. Asshown in FIG. 11B, the fin end sidewall spacer plug 140 is formed tofill a space adjacent to an end of the fin in a lengthwise direction andthe space is between ends of the fins.

FIGS. 11A and 11C show an operation for formation of sidewall spacerplug 140 for the fin end. The fin end sidewall spacer plug 140 for finend is formed of an insulating material different from the STI layer 60.In some embodiments, the fin end sidewall spacer plug 140 includes oneor more layers of a silicon nitride based insulating material, such assilicon nitride, silicon oxynitride, silicon carbon nitride, or siliconcarbon oxynitride, by a deposition method, such as chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD); physical vapor deposition (PVD); atomic layer deposition(ALD); or other suitable process. FIG. 11A shows a top plan view of thesidewall spacer plug 140 and FIG. 11C shows a cross-sectional view. Asshown in FIG. 11C, the fin end sidewall spacer plug 140 is formed tofill a space adjacent to an end of the fin in a lengthwise direction andthe space is between ends of the fins.

FIGS. 12A and 12B show an operation for chemical and mechanicalpolishing (CMP) process to remove the layers on the fin structure 40.FIG. 12A shows a top plan view and FIG. 12B shows a cross-sectional viewof an operation of manufacturing a semiconductor device according to anembodiment of the disclosure. By the CMP process, the upper surfaces ofthe fin structures 40 a are exposed. In this way, a deep plug 140′ isformed with a bottom level lower than the insulating material layer 60.The CMP process is performed such that upper surface of the finstructures 40 (40 a) are and the upper surface of the deep plug 140′ aresubstantially flush with each other (same height).

FIGS. 12A and 12C show an operation for chemical and mechanicalpolishing (CMP) process to remove the layers on the fin structure 40.FIG. 12A shows a top plan view and FIG. 12C shows a cross-sectional viewof an operation of manufacturing a semiconductor device according to anembodiment of the disclosure. By the CMP process, the upper surfaces ofthe fin structures 40 a are exposed. In this way, a shallow plug 140″ isformed with a bottom level higher than the insulating material layer 60.The CMP process is performed such that upper surface of the finstructures 40 (40 a) are and the upper surface of the deep plug 140″ aresubstantially flush with each other (same height).

FIG. 13A shows a top plan view and FIGS. 13B and 13C showcross-sectional views of embodiments having a polycrystalline siliconlayer 90′ formed over a dummy oxide layer 200 on the deep plug 140′ andthe shallow plug 140″, respectively. The dummy oxide layer 200, similarto the sacrificial gate dielectric layer 70, is formed on the finstructures and the upper surface of the fin end plug 140 (140′ or 140″).In some embodiments, the oxide layer 200 is formed of insulatingmaterials, such as silicon oxide by chemical vapor deposition (CVD),including low pressure CVD (LPCVD) and plasma enhanced CVD (PECVD); andphysical vapor deposition (PVD), such as sputtering, or other suitableprocess. In some embodiments, the polycrystalline silicon layer 90′ isformed using chemical vapor deposition (CVD), including low pressure CVD(LPCVD) and plasma enhanced CVD (PECVD); and physical vapor deposition(PVD), such as sputtering; or other suitable process.

FIG. 14A shows a top plan view and FIGS. 14B and 14C showcross-sectional views of embodiments having one or more hard mask layersformed on the polycrystalline silicon layer 90′. In some embodiments,the hard mask layer includes a first hard mask layer 90″ made of, forexample, silicon nitride. The first hard mask layer 90″ is formed byusing chemical vapor deposition (CVD), including low pressure CVD(LPCVD) and plasma enhanced CVD (PECVD); and physical vapor deposition(PVD), such as sputtering, atomic layer deposition (ALD) or othersuitable process.

FIGS. 15A-22B show cross-sectional views of processes of embodimentshaving the deep plug 140′ as an example. The processes of embodimentshaving the shallow plug 140″ are not shown. One of ordinary skill in theart would readily understand, through the processes applied toembodiments having the deep plug 140′, the similar processes applied toembodiments having the shallow plug 140″.

In FIGS. 15A and 15B, a second hard mask layer 90′″ made of, forexample, silicon oxide, is formed on the first hard mask layer 90″. Thesecond hard mask layer 90′″ is formed by using chemical vapor deposition(CVD), including low pressure CVD (LPCVD) and plasma enhanced CVD(PECVD); and physical vapor deposition (PVD), such as sputtering; atomiclayer deposition (ALD); or other suitable process. In some embodiments,the first hard mask layer 90″ is made of silicon oxide based material,such as silicon oxide, and the second hard mask layer 90′″ is made ofsilicon nitride based material as set forth above.

Then, as shown in FIGS. 16A and 16B, a mask pattern M is formed on thesecond hard mask layer 90′″ by spin coating and photolithographicmethod. The mask pattern M is formed of a light-sensitive photoresistlayer. The region B outlined by the dotted line will be discussed infurther details in FIGS. 17A-22B. FIGS. 17A and 17B show the enlargedregion B of the embodiment of FIG. 16B.

FIGS. 18A and 18B show an operation of etching the oxide hard mask layer90′″, silicon nitride hard mask layer 90″, and the polycrystallinesilicon layer 90′ using the mask pattern M. The etching is anisotropicdry etching in some embodiments. Through this operation, thepolycrystalline dummy silicon structures 90 and 100′ are defined. Thepolycrystalline dummy silicon structure 90 is formed on a region in thefin structure 40, and the polycrystalline silicon dummy structure 100′is formed on a region spaced-apart from the fin end of the fin structure40, e.g., between the ends of two adjacent fin structures. Since theplug 140′ is made of a silicon nitride based material, which is the sameas or similar to the material of the second hard mask layer 90″, theplug 140′ is not substantially etched in the patterning operation of thesilicon dummy structure 100′.

FIGS. 19A, 19B and 19C show an operation according to some embodimentsof the present disclosure. In this operation, a gate sidewall spacerlayer 150 is conformally formed on the patterned polycrystalline silicondummy structures of FIGS. 18A and 18B. After the gate sidewall spacerlayer 150 is formed, anisotropic etching is performed to remove the gatesidewall spacer layer 150 formed on the top of the polycrystallinesilicon dummy structures 90 and 100′ and on the upper surface of the finstructure 40 (as shown in FIGS. 19A and 19B). The conformally formedgate sidewall spacer layer 150 fully covers the polycrystalline dummysilicon structure 100′ because the fin end spacer plug 140′ fills aspace adjacent to an end of the fin and a narrow gap is not formed. Thegate sidewall spacer layer 150 protects the source/drain epitaxial layerfrom being etched. Since the gate sidewall spacer layer 150 iscompletely formed and the fin end spacer plug 140′ fills the spacerbetween the fins, a subsequently formed source/drain epitaxial layer isfully protected from a subsequent etch process.

As shown in FIG. 19C, the polycrystalline dummy silicon structure 100′is provided between ends of two fin structures 40 and does not overlapthe fin structures. No dummy silicon structure is disposed above theends (edge) of the fin structures in some embodiments. The fin endspacer plug 140′ electrically and physically separates thepolycrystalline dummy silicon structure 100′ and the fin structures.Accordingly, after the dummy polysilicon structures 90 and 110′ arereplaced with metal gate structures in the subsequent operations, it ispossible to secure electrical separation between the dummy metal gateformed by replacing the polycrystalline dummy silicon structure 100′with a metal gate structure and the fin structures 40. In addition,compared with the case where two polycrystalline dummy siliconstructures are disposed over the ends of two fin structures,respectively, the layout shown in FIG. 19C can reduce a distance betweenthe ends of two adjacent fin structures by about 5-6% and also reduce acell size by about 6%.

FIGS. 20A and 20B show an operation according to an embodiment of thepresent disclosure. In FIGS. 20A and 20B, a source/drain recess 110 isformed in the fin active region 40 a (not shown) by etching the finactive region 40 a. The fin-end sidewall spacer plug 140′ is not etchedin the region between the polycrystalline silicon dummy structures 90and the polycrystalline silicon dummy structures 100′ during etching ofthe fin active region 40 a. Thus, the etched portion of the activeregion 40 a is laterally separated from the polycrystalline siliconlayer 90 of the polycrystalline silicon dummy structures 100′. Althoughthe fin-end sidewall spacer plug 140′ is exposed in the source/drainrecess 110 (the right one) in FIG. 20B, a part of the fin active region40 a remains between the fin-end sidewall spacer plug 140′ and thesource/drain recess 110 in other embodiments. If the layer 140′ (or140″) is not formed on the insulating material layer 60 (STI), thepolycrystalline silicon dummy structures 100′ is formed on theinsulating material layer 60 with the thin dummy oxide layer 200interposed therebetween. One of the gate sidewall spacers 150 at the finside may not be sufficiently formed on the polycrystalline silicon dummystructures 100′ due to the small space between the polycrystallinesilicon dummy structures 100′ and the fin structure. In such case, whenetching the source/drain region, the source/drain recess 110 isconnected to the polycrystalline silicon dummy structures 100′, whichmay cause a defect in the subsequent epitaxial layer formation. Incontrast, by using the layer 140 to increase the bottom height of thepolycrystalline silicon dummy structures 100′, it is possible to preventthe defect in the subsequent epitaxial layer formation.

FIGS. 21A and 21B show an operation according to an embodiment of thepresent disclosure. In FIGS. 21A and 21B, source/drain epitaxial layer120 is deposited in the source/drain recess 110 formed in the fin activeregion 40 a. In some embodiments, the source/drain epitaxial layerincludes SiP, SiGe, etc. The source/drain epitaxial layer 120 isseparated from the polycrystalline silicon dummy structures 90 and 100′by the fin end sidewall spacer plug 140′ and/or the gate sidewallspacers 150 of the polycrystalline silicon dummy structures 100′.

FIGS. 22A and 22B show an operation of depositing an interlayerdielectric (ILD) layer 130 on the source/drain epitaxial layer 120 andremoving the polycrystalline silicon dummy structures 90 and 100′without removing the sidewall spacers 150. In some embodiments, acontact etch stop layer (CESL) is formed over the structure of FIGS. 21Aand 21B before the ILD layer 130 is formed. During the process ofremoving the polycrystalline silicon dummy structures 90 and 100′, thesource/drain epitaxial layer 120 is covered by the fin-end sidewallspacer plug 140′ and the ILD layer 130 and is thus not etched orremoved, preserving the source/drain epitaxial layer 120 at fin end ofthe fin structure 40. In this way, the source/drain epitaxial layer 120is not etched even if the gate sidewall spacer layer 150 which issupposed to protect the source/drain epitaxial layer 120 from etching isnot fully formed. In some embodiments, the polycrystalline silicon dummystructure 100′ is not removed in the gate replacement operation.

After the polycrystalline silicon dummy structures 90 and 100′ areremoved, a gate dielectric layer (not shown) is formed over the channelregions of the fin structure 40 and the fin-end sidewall spacer plug140′, and a gate electrode layer 190 is formed on the gate dielectriclayer, as shown in FIGS. 22A and 22B. In certain embodiments, the gatedielectric layer includes one or more layers of a dielectric material,such as silicon oxide, silicon nitride, or high-k dielectric material,other suitable dielectric material, and/or combinations thereof.Examples of high-k dielectric material include HfO₂, HfSiO, HfSiON,HfTaO, HfTiO, HfZrO, zirconium oxide, aluminum oxide, titanium oxide,hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-kdielectric materials, and/or combinations thereof. The gate dielectriclayer may be formed from CVD, ALD or any suitable method. In oneembodiment, the gate dielectric layer is formed using a highly conformaldeposition process such as ALD in order to ensure the formation of agate dielectric layer having a uniform thickness around each channelregions. The thickness of the gate dielectric layer is in a range fromabout 1 nm to about 6 nm in one embodiment. In some embodiments, thegate dielectric layer is conformally formed in a space from which thepolycrystalline silicon dummy structures 90 and 100′ are removed.

The gate electrode layer 190 includes one or more layers of conductivematerial, such as polysilicon, aluminum, copper, titanium, tantalum,tungsten, cobalt, molybdenum, tantalum nitride, nickel silicide, cobaltsilicide, TiN, WN, TiAl, TiAlN, TaCN, TaC, TaSiN, metal alloys, othersuitable materials, and/or combinations thereof. The gate electrodelayer 190 may be formed from CVD, ALD, electro-plating, or othersuitable method. The gate electrode layer is also deposited over theupper surface of the ILD layer 130. The gate dielectric layer and thegate electrode layer formed over the ILD layer 130 is then planarized byusing, for example, CMP, until the top surface of the ILD layer 130 isrevealed as shown in FIG. 17A.

In certain embodiments of the present disclosure, one or more workfunction adjustment layers (not shown) are interposed between the gatedielectric layer and the gate electrode layer 190. The work functionadjustment layers are made of a conductive material such as a singlelayer of TiN, TaN, TaAlC, TiC, TaC, Co, Al, TiAl, HfTi, TiSi, TaSi orTiAlC, or a multilayer of two or more of these materials. For then-channel FET, one or more of TaN, TaAlC, TiN, TiC, Co, TiAl, HfTi, TiSiand TaSi is used as the work function adjustment layer, and for thep-channel FET, one or more of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC andCo is used as the work function adjustment layer. The work functionadjustment layer may be formed by ALD, PVD, CVD, e-beam evaporation, orother suitable process. Further, the work function adjustment layer maybe formed separately for the n-channel FET and the p-channel FET whichmay use different metal layers.

The gate electrode 195 formed over the fin-end sidewall spacer plug 140′is a dummy gate electrode, which does not function as a part of electriccircuitry. As set forth above, the dummy gate electrode 195 is separatedfrom the source/drain epitaxial layer 120 from the fin-end sidewallspacer plug 140′ as shown in FIG. 22B.

Hereinafter, a manufacturing operation for a FinFET according to anotherembodiment is explained. FIG. 23 shows a schematic view of the substrateof FIG. 6B with polycrystalline silicon dummy structures 90 and 100,according to an embodiment of the present disclosure and FIG. 24 shows atop plan view of the processed substrate of FIG. 28 . In FIG. 23 , insome embodiments of the present disclosure, the fin structures 40 areformed on the substrate 10 and extend in a lengthwise direction alongx-direction. Each of the fin structures 40 has two fin edge regions atopposite ends along the lengthwise direction of the fin structures 40 inthe x-direction. One or more channel regions are formed between the finends. In some embodiments of the present disclosure, the separationbetween the fin structures 40 depends on the device design.

Also, in FIG. 23 , the polycrystalline silicon dummy structure 100 isformed over the fin ends of the fin structures 40. As shown in FIG. 24 ,there are no gaps between the polycrystalline silicon dummy structure100 and the fin structure 40, and the polycrystalline silicon dummystructure 100 overlaps the ends of the fin structure 40. Thepolycrystalline silicon dummy structures 90 are formed over regions ofthe fin structures 40 between the fin ends along the lengthwisedirection (i.e. x direction). FIG. 24 shows a top plan view of theembodiment of FIG. 23 . In some embodiments, the dummy structures 90 and100′ are formed of amorphous silicon or other suitable material.

FIGS. 25A, 25B, 26A, 26B, 26C, 27A, 27B, 27C, 28A, 28B, 28C, 29A, 29B,29C, 30A, 30B, 30C, 31A, 31B, 32A, 32B, 33A, 33B, 34A, 34B, 35A, 35B,36A, 36B, 37A, 37B, 38A, and 38B show operations of manufacturing asemiconductor FinFET device according to an embodiment of the presentdisclosure. Each of FIGS. 25A, 26A, 27A, 28A, 29A, 30A, 31A, 32A, 33A,34A, 35A, 36A, 37A, and 38A includes a top plan view and each of FIGS.25B, 26B, 26C, 27B, 27C, 28B, 28C, 29B, 29C, 30B, 30C, 31B, 32B, 33B,34B, 35B, 36B, 37B, and 38B includes a cross-sectional view of thesemiconductor FinFET device along a cut line A-A in a plane including xand z axes of FIG. 1 . Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.It is understood that additional operations can be provided before,during, and after processes shown by FIGS. 25A-38B, and some of theoperations described below can be replaced or eliminated, for additionalembodiments of the method. The order of the operations/processes may beinterchangeable. Material, configuration, dimensions and/or processesthe same as or similar to the foregoing embodiments described withrespect to FIGS. 1-22B may be employed in the following embodiments, anddetailed explanation thereof may be omitted.

FIGS. 25A and 25B show an operation for fin-end patterning. Inparticular, FIG. 25A shows a top plan view of an embodiment of thepresent disclosure. Also, FIG. 25B shows a cross-sectional view of theembodiment, indicating the layering structure. The fin structure 40 hasa bottom region 40 i and a top active region 40 a which is processed toform a channel region (not shown) and a source/drain region (not shown).As set forth above, after the fin structures 40 are patterned by usingthe first and second mask layers 31 and 32 as shown in FIG. 5A or 5B,the insulating material layer 60 is formed to cover the patterned finstructures 40. Then, a CMP operation is performed to remove the upperportion of the insulating material layer 60 to form an STI layer 60. Inthis embodiment, the CMP stops on the upper surface of the second masklayer 32. In FIGS. 25A and 25B, a silicon nitride layer 80 a, whichcorresponds to the first mask layer 31, is formed on the fin activeregion 40 a, and an insulating oxide layer 80 b, which corresponds tothe second mask layer 32, is formed on the silicon nitride layer 80 a.

In FIG. 25B, a fin liner 50 is formed on the bottom region 40 i of thefin structures 40. A mask pattern 80 c is subsequently formed on theinsulating oxide layer 80 b by a photolithographic method. The maskpattern 80 c is formed of a light sensitive photoresist material in someembodiments.

FIGS. 26A and 26B show an operation for etching the insulating oxidelayer 80 b and the shallow trench isolation (STI) layer 60. The etchingincludes one or more dry etching and/or wet etching. FIG. 26A shows atop plan view, and FIG. 26B shows a cross-sectional view of theembodiment. FIG. 26B shows that the shallow trench isolation (STI) layer60 is recessed and the fin liner 50 is not etched. In some embodimentsof the present disclosure, the STI layer 60 is recessed to have a topsurface lower than the top surface of the fin liner 50. In someembodiments of the present disclosure, the STI layer 60 is recessed tohave a top surface at the same level as the top surface of the fin liner50.

FIGS. 26A and 26C show an operation for etching the insulating oxidelayer 80 b and the shallow trench isolation (STI) layer 60. The etchingincludes one or more dry etching and/or wet etching. FIG. 26A shows atop plan view, and FIG. 26C shows a cross-sectional view of theembodiment. FIG. 26B shows that the shallow trench isolation (STI) layer60 is recessed and the fin liner 50 is not etched. In some embodimentsof the present disclosure, the STI layer 60 is recessed to have a topsurface higher than the top surface of the fin liner 50. In someembodiments of the present disclosure, the STI layer 60 is recessed tohave a top surface at the same level as the top surface of the fin liner50.

FIGS. 27A and 27B show an operation for formation of sidewall spacerplug 140 for fin end. The fin end sidewall spacer plug 140 for fin endis formed of a silicon nitride based insulating material, such assilicon nitride, silicon oxynitride, silicon carbon nitride, or siliconcarbon oxynitride, by a deposition method, such as chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD); physical vapor deposition (PVD); atomic layer deposition(ALD); or other suitable process. As shown in FIGS. 27A and 27B, thefin-end sidewall spacer plug 140 is conformally formed. The thickness ofthe fin-end sidewall spacer plug 140 is in a range from about 10 nm toabout 50 nm in some embodiments, and is in a range from about 20 nm toabout 40 nm in other embodiments.

FIGS. 27A and 27C show an operation for formation of sidewall spacerplug 140 for fin end. The fin end sidewall spacer plug 140 for fin endis formed of a silicon nitride based insulating material, such assilicon nitride, silicon oxynitride, silicon carbon nitride, or siliconcarbon oxynitride, by a deposition method, such as chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD); physical vapor deposition (PVD); atomic layer deposition(ALD); or other suitable process. As shown in FIGS. 27A and 27C, thefin-end sidewall spacer plug 140 is conformally formed. The thickness ofthe fin-end sidewall spacer plug 140 is in a range from about 10 nm toabout 50 nm in some embodiments, and is in a range from about 20 nm toabout 40 nm in other embodiments.

FIGS. 28A and 28B show an operation for chemical and mechanicalpolishing (CMP) process to remove the layers over the fin structure 40.By the CMP process, the upper surfaces of the fin structures 40 areexposed. In this way, a deep plug 140′ is formed.

A dummy oxide layer 200, similar to the sacrificial gate dielectriclayer 70, is formed on the fin structures and the upper surface of thedeep plug or fin end spacer plug 140′ as shown in FIGS. 28A and 28B. Insome embodiments, the dummy oxide layer 200 is formed of insulatingmaterials such as silicon oxide by chemical vapor deposition (CVD),including low pressure CVD (LPCVD) and plasma enhanced CVD (PECVD); andphysical vapor deposition (PVD) such as sputtering; or other suitableprocess.

FIGS. 28A and 28C show an operation for chemical and mechanicalpolishing (CMP) process to remove the layers over the fin structure 40.By the CMP process, the upper surfaces of the fin structures 40 areexposed. In this way, a shallow plug 140″ is formed.

A dummy oxide layer 200, similar to the sacrificial gate dielectriclayer 70, is formed on the fin structures and the upper surface of thefin end spacer plug 140″ as shown in FIGS. 28A and 28C. In someembodiments, the dummy oxide layer 200 is formed of insulating materialssuch as silicon oxide by chemical vapor deposition (CVD), including lowpressure CVD (LPCVD) and plasma enhanced CVD (PECVD); and physical vapordeposition (PVD) such as sputtering; or other suitable process.

In FIGS. 29A, 29B, and 29C, a polycrystalline silicon layer 90′ isformed over the dummy oxide layer 200. In some embodiments, thepolycrystalline silicon layer 90′ is formed using chemical vapordeposition (CVD), including low pressure CVD (LPCVD) and plasma enhancedCVD (PECVD); and physical vapor deposition (PVD) such as sputtering; orother suitable process.

One or more hard mask layers is formed on the polycrystalline siliconlayer 90′ as shown in FIGS. 30A, 30B, and 30C. In some embodiments, thehard mask layer includes a first hard mask layer 90″ made of, forexample, silicon nitride. The hard mask layer 90″ is formed by usingchemical vapor deposition (CVD), including low pressure CVD (LPCVD) andplasma enhanced CVD (PECVD); and physical vapor deposition (PVD) such assputtering; atomic layer deposition (ALD) or other suitable process.

FIGS. 31A-38B show cross-sectional views of processes of embodimentshaving the deep plug 140′ as an example. The processes of embodimentshaving the shallow plug 140″ are not shown. One of ordinary skill in theart would readily understand, through the processes applied toembodiments having the deep plug 140′, the similar processes applied toembodiments having the shallow plug 140″.

In FIGS. 31A and 31B, a second hard mask layer 90′″ made of, forexample, silicon oxide, is formed on the first hard mask layer 90″. Thesecond hard mask layer 90′″ is formed by using chemical vapor deposition(CVD), including low pressure CVD (LPCVD) and plasma enhanced CVD(PECVD), and physical vapor deposition (PVD) such as sputtering, atomiclayer deposition (ALD) or other suitable process. Then, as shown inFIGS. 32A and 32B, a mask pattern M is formed on the second hard masklayer 90′″ by spin coating and a photolithographic method. The maskpattern M is formed of a light-sensitive photoresist layer in someembodiments. The region B outlined by the dotted line will be discussedin further details in FIGS. 33A-33B. FIGS. 33A and 33B show the enlargedregion B of the embodiment of FIG. 32B.

FIGS. 34A and 34B show an operation of etching the oxide hard mask layer90′″, silicon nitride hard mask layer 90″, and the polycrystallinesilicon layer 90′ using the mask pattern M. The etching is anisotropicdry etching in some embodiments. Through this operation, thepolycrystalline dummy silicon structures 90 and 100 are defined. Thepolycrystalline silicon dummy structures 90 are formed on a region inthe fin structure 40, and the polycrystalline silicon dummy structures100 are formed on an edge of the fin end of the fin structure 40.

FIGS. 35A and 35B show an operation according to some embodiments of thepresent disclosure. In this operation, a gate sidewall spacer layer 150is conformally formed on the patterned polycrystalline silicon dummystructures of FIGS. 35A and 35B. After the gate sidewall spacer layer150 is formed, anisotropic etching is performed to remove the gatesidewall spacer layer 150 formed on the top of the polycrystallinesilicon dummy structures 90 and 100 and on the upper surface of the finstructure 40.

FIGS. 36A and 36B show an operation according to an embodiment of thepresent disclosure. In FIGS. 36A and 36B, a source/drain recess 110 isformed in the fin active region 40 a by etching the fin active region 40a. In the etching of the fin active region 40 a, at the region betweenthe polycrystalline silicon dummy structures 90 and the polycrystallinesilicon dummy structures 100, the fin-end sidewall spacer plug 140′and/or the gate sidewall spacer 150 on the polycrystalline silicon dummystructures 100 is not etched, and thus the etched portion of the activeregion 40 a is laterally separated from the polycrystalline siliconlayer 90 of the polycrystalline silicon dummy structures 100.

FIGS. 37A and 37B show an operation according to an embodiment of thepresent disclosure. In FIGS. 37A and 37B, a source/drain epitaxial layer120 including Si—P is deposited in the source/drain recess 110 formed inthe fin active region 40 a. The source/drain epitaxial layer 120 isseparated from the polycrystalline silicon dummy structures 90 and 100by the sidewall spacer plug 140′.

FIGS. 38A and 38B show an operation of depositing an insulatingdielectric layer 130 on the source/drain epitaxial layer 120 andremoving the polycrystalline silicon dummy structures 90 and 100′without removing the sidewall spacers 150. Because fin-end sidewallspacer plug 140′ covers the edge of the fin structure, the source/drainepitaxial layer 120 is not etched or removed. The fin end spacer plug140′ provides protection, preserving the source/drain epitaxial layer120 at the end of the fin structure 40.

In the above embodiments, the positions of the polycrystalline silicondummy structures 100 (FIGS. 23-43B) and 100′ (FIGS. 7-24B) aredifferent. Because of the structure of the sidewall spacer 150 and thefin end spacer plug 140′ fully covering or enclosing the polycrystallinesilicon dummy structures 90, 100, and 100′ and the fin 40, thesource/drain epitaxial layers 120 can still be maintained intact withoutbeing etched or chemically altered through subsequent semiconductorprocessing.

Overlay shift causes misalignment of structures and the formation of anundesirable narrow gap, which does not allow the protective layers of adevice to be fully formed, thereby, causing defects in device. In theforegoing embodiments, a fin-end sidewall spacer plug 140′ is employedto protect the source/drain epitaxial layer and fin ends during dummypolycrystalline silicon removal.

The various embodiments or examples described herein offer severaladvantages over the existing art. For example, in the presentdisclosure, the fin end sidewall spacer plug 140′ preserves thesource/drain epitaxial layer 120 at fin end of the fin structure 80 evenwhen overlay shift occurs and the spacer layers 150 is not completelyformed due to the narrowness of a gap adjacent to a fin end.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages. In accordance with an aspect of the presentdisclosure, in a method of manufacturing a semiconductor device, a firstisolation insulating layer is formed between fins. A second isolationinsulating layer, as a fin end spacer plug, is formed over the firstisolation insulating layer, filling a space adjacent to ends of the finsin a lengthwise direction. A dummy oxide layer is formed over the fin,the fin end spacer plug, and the first isolation insulating layer.Polycrystalline silicon layers are formed on a region in the fin and onan edge region of the fin at an end in the lengthwise direction.Sidewall spacer layers are formed on the polycrystalline silicon layers.A source/drain region of the fin, which is not covered by the sidewallspacer layers, is etched to form a source/drain space. A source/drainepitaxial layer is formed in the source/drain space. After thesource/drain epitaxial layer is formed, forming a contact layer andetching the polycrystalline silicon layers.

In accordance with an aspect of the present disclosure, in a method ofmanufacturing a semiconductor device, an insulating layer is formed on asurface of an end of a fin along a lengthwise direction. A fin endspacer plug is formed on the insulating layer. A dummy oxide layer isformed over the fin, the fin end spacer plug, and the insulating layer.Polycrystalline silicon layers are formed on a region on the fin and ona region spaced-apart from the fin. Sidewall spacer layers are formed onthe polycrystalline silicon layers. A source/drain region of the fin,which is not covered by the sidewall spacer layers, thereby forming asource/drain space. A source/drain epitaxial layer is formed in thesource/drain space.

In accordance with another aspect of the present disclosure, asemiconductor device includes a plurality of fins on a substrate, a finend spacer plug on an end surface of each of the plurality of fins and afin liner layer, an insulating layer on the plurality of fins, and asource/drain epitaxial layer in a source/drain recess in each of theplurality of fins.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a first finand a second fin each with a fin liner layer, on a substrate; a fin endspacer plug on end surfaces of the first and second fins; gateelectrodes disposed over the first and second fins, respectively; adummy gate electrode over the fin end spacer plug and one of the firstor the second fins; an insulating layer on the plurality of fins; and asource/drain epitaxial layer in a source/drain recess in each of theplurality of fins.
 2. The semiconductor device of claim 1, furthercomprising sidewall spacers formed on the fins, wherein the fin endspacer plug and the sidewall spacers are formed of the same material. 3.The semiconductor device of claim 1, wherein the fin end spacer plug hasa bottom level below a top surface of the fin liner layer.
 4. Thesemiconductor device of claim 1, wherein the fin end spacer plug has abottom level above a top surface of the fin liner layer.
 5. Thesemiconductor device of claim 1, wherein the source/drain epitaxiallayer includes Si—P.
 6. The semiconductor device of claim 1, wherein thefin end spacer plug is formed of a material including silicon nitridebased material.
 7. The semiconductor device of claim 6, wherein thesilicon nitride based material includes silicon nitride, siliconoxynitride, silicon carbon nitride, and silicon carbon oxynitride.
 8. Asemiconductor device, comprising: a first fin and a second fin each witha fin liner layer, on a substrate; a fin end spacer plug on end surfacesof the first and second fins; gate electrodes disposed over the firstand second fins, respectively; a dummy gate electrode over the fin endspacer plug; an insulating layer on the plurality of fins; and asource/drain epitaxial layer in a source/drain recess in each of theplurality of fins, wherein no gate electrode and no dummy gate electrodeis disposed above edge of the fins.
 9. The semiconductor device of claim8, further comprising sidewall spacers formed on the fins, wherein thefin end spacer plug and the sidewall spacers are formed of the samematerial.
 10. The semiconductor device of claim 8, wherein the fin endspacer plug has a bottom level below a top surface of the fin linerlayer.
 11. The semiconductor device of claim 8, wherein the fin endspacer plug has a bottom level above a top surface of the fin linerlayer.
 12. The semiconductor device of claim 8, wherein the source/drainepitaxial layer includes Si—P.
 13. The semiconductor device of claim 8,wherein the fin end spacer plug shields the source/drain epitaxiallayer.
 14. The semiconductor device of claim 13, wherein the fin endspacer plug is formed of a material including silicon nitride basedmaterial.
 15. The semiconductor device of claim 8, wherein the siliconnitride based material includes silicon nitride, silicon oxynitride,silicon carbon nitride, and silicon carbon oxynitride.
 16. Asemiconductor device, comprising: a first fin and a second fin along aline extending in a first direction and separated from each other; a finend spacer plug extending in a second direction perpendicular to thefirst direction and disposed between ends of the first fin and thesecond fin; gate electrodes respectively disposed over the first fin andsecond fin; and a dummy gate electrode disposed over the fin end spacerplug and between the ends of the first fin and the second fin, whereinthe dummy gate electrode is separated from the ends of the first andsecond fins by the fin end spacer plug.
 17. The semiconductor device ofclaim 16, wherein the fin end spacer plug comprises a first layer madeof a first material and a second layer made of a second material on thefirst material, wherein the first material and the second material aredifferent, and wherein the dummy gate electrode is separated from theends of the first and second fins by the second layer of the fin endspacer plug.
 18. The semiconductor device of claim 16, furthercomprising an insulating layer on the plurality of fins.
 19. Thesemiconductor device of claim 16, wherein each of the first fin and thesecond fin is formed on a substrate and comprises a fin liner layer. 20.The semiconductor device of claim 16, further comprising a source/drainepitaxial layer formed in a source/drain recess in each of the first finand the second fin.